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MEMS Gallery


8µm microfluidics channels, formed at low temp without lamination or bonding. Etch holes sealed with dielectric.
Silicon Anisotropic Etching. Deep silicon etch to full wafer thickness, leaving a 1µm membrane. Wall angle = 54°.
Stress-free silicon in photonics application
Optical grating in 10µm silica. Oxide etch, angle = 89.5 ±0.5’. Typical wall roughness = 20nm rms.
Optical grating in 10µm silica. Oxide etch, angle = 89.5 ±0.5°. Typical wall roughness = 20nm rms.		 Deep vertical oxide etch
Deep vertical oxide etch		 V-grooves for telecom fiber
V-grooves for telecom fiber
DRIE: Deep, smooth, vertical etch
DRIE: Deep, smooth, vertical etch. 		Telecom MEMS
Telecom MEMS: mechanical test structure		 Mechanically released infrared mirror
Low-temperature mechanically released infrared mirror

Low-temperature mechanically released cantilevers		 Low-temperature mechanically released cantilevers

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